AS29LV800B-90TI 参数 Datasheet PDF下载

型号：	AS29LV800B-90TI
PDF下载：	下载PDF文件查看货源
内容描述：	3V 1M × 8 / 512K × 16的CMOS闪存EEPROM [3V 1M】8/512K】16 CMOS Flash EEPROM]
分类和应用：	闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小：	25 页 / 440 K
品牌：	ANADIGICS [ ANADIGICS, INC ]

AS29LV800

March 2001

Sector protect algorithm

Sector unprotect algorithm

START

PLSCNT = 1

RESET# = V

Wait 1 µs

Protect all sectors:

The shaded portion of

the sector protct

First Write

Cycle=60h?

Temporary sector

unprotect mode

First Write

Cycle=60h?

Temporary sector

unprotect mode

algorithm must be

initiated for all

Yes

Set up sector

unprotected sectors

before calling the

sector unprotect

address

All sectors

protected?

Sector protect:

write 60h to sector

address with

Yes

A6=0, A1=1,

A0=0

Sector unprotect:

write 60h to sector

address with

A6=1, A1=1,

A0=0

Wait 150 µs

Verify sector

protect; write 40h

to sector address

with A6=0,

Wait 15 ms

Increment

PLSCNT

Set up first

sector address

A1=1, A0=0

Verify sector

unprotect; write 40h

to sector address

with A6=1,

Read from sector

address with A6=0,

A1=1, A0=0

Increment

PLSCNT

A1=1, A0=0

Read from sector

address with A6=1,

A1=1, A0=0

Data=01h?

Yes

PLSCNT=25?

Set up next

Yes

sector address

Protect

another

Yes

PLSCNT

=1000?

Data=00h?

Yes

sector?

Device failed

Yes

Remove V

from RESET#

Last sector

verified?

Device failed

Write reset

command

Yes

Remove V

Sector protect

complete

from RESET#

Write reset

command

Sector unprotect

complete

3/22/01; V.1.0

Alliance Semiconductor

P. 14 of 25

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