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AS29LV800B-90TI 参数 Datasheet PDF下载

AS29LV800B-90TI图片预览
型号: AS29LV800B-90TI
PDF下载: 下载PDF文件 查看货源
内容描述: 3V 1M × 8 / 512K × 16的CMOS闪存EEPROM [3V 1M】8/512K】16 CMOS Flash EEPROM]
分类和应用: 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 25 页 / 440 K
品牌: ANADIGICS [ ANADIGICS, INC ]
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March 2001
®
AS29LV800
Automated on-chip programming algorithm
START
Automated on-chip erase algorithm
START
Write erase command sequence
(see below)
Write program command sequence
(see below)
DATA polling or toggle bit
successfully completed
DATA polling or toggle bit
successfully completed
Erase complete
Increment
address
Last
address?
NO
Individual sector/multiple sector
Chip erase command sequence
×16 mode (address/data):
555h/AAh
erase command sequence
×16 mode (address/data):
555h/AAh
YES
Programming completed
2AAh/55h
2AAh/55h
555h/80h
555h/80h
Program command sequence
×16 mode (address/data):
555h/AAh
555h/AAh
555h/AAh
2AAh/55h
2AAh/55h
555h/10h
555h/A0h
2AAh/55h
Sector address/30h
Sector address/30h
Program address/program data
Sector address/30h
optional sector erase commands
The system software should check the status of DQ3 prior to and following each
subsequent sector erase command to ensure command completion. The device may
not have accepted the command if DQ3 is high on second status check.
3/22/01; V.1.0
Alliance Semiconductor
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