20V P-Channel Power MOSFET
General Description
The AAT7157 low threshold 20V, dual P-Channel
MOSFET is a member of AnalogicTech™'s
TrenchDMOS™ product family. Using an ultra-high
density proprietary TrenchDMOS technology the
AAT7157 is designed for use as a load switch in
battery powered applications and protection in bat-
tery packs.
AAT7157
Features
•
•
•
V
DS(MAX)
= -20V
I
D(MAX)
1
= -5.8A @ 25°C
Low R
DS(ON)
:
• 36 mΩ @ V
GS
= -4.5V
• 62 mΩ @ V
GS
= -2.5V
Dual SOP-8L Package
Applications
•
•
Battery Packs
Battery-powered portable equipment
D1
8
Top View
D1
7
D2
6
D2
5
1
S1
2
G1
3
S2
4
G2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
(T
A
=25°C unless otherwise noted)
Value
-20
±12
±5.8
±4.6
±24
-1.5
2.0
1.25
-55 to 150
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150°C
1
Units
V
T
A
= 25°C
T
A
= 70°C
1
Pulsed Drain Current
2
Continuous Source Current (Source-Drain Diode)
Maximum Power Dissipation
1
A
T
A
= 25°C
T
A
= 70°C
W
°C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
R
θJA
R
θJA2
R
θJF
Description
Typical Junction-to-Ambient steady state
1
Maximum Junction-to-Ambient t<10 seconds
Typical Junction-to-Foot
1
1
Value
100
62.5
35
Units
°C/W
7157.2004.04.1.0
1
ANALOGICTECH [ ADVANCED ANALOGIC TECHNOLOGIES ]
