AAT7157
20V P-Channel Power MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Description
DC Characteristics
Conditions
Min Typ Max Units
BVDSS
Drain-Source Breakdown Voltage VGS=0V, ID=-250µA
-20
V
VGS=-4.5V, ID=-5.8A
VGS=-2.5V, ID=-4.4A
VGS=-4.5V, VDS=5V (Pulsed)
VGS=VDS, ID=-250µA
VGS=±12V, VDS=0V
29
49
36
62
2
RDS(ON)
Drain-Source ON-Resistance
mΩ
2
ID(ON)
VGS(th)
IGSS
On-State Drain Current
Gate Threshold Voltage
Gate-Body Leakage Current
-24
-0.6
A
V
nA
±100
-1
-5
V
GS=0V, VDS=-20V
IDSS
Drain Source Leakage Current
µA
S
3
VGS=0V, VDS=-16V, TJ=70°C
VDS=-5V, ID=-5.8A
2
gfs
Forward Transconductance
12
3
Dynamic Characteristics
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
Total Gate Charge
VDS=-15V, RD=2.6Ω, VGS=-4.5V
VDS=-15V, RD=2.6Ω, VGS=-4.5V
VDS=-15V, RD=2.6Ω, VGS=-4.5V
VDS=-15V, RD=2.6Ω, VGS=-4.5V, RG=6Ω
VDS=-15V, RD=2.6Ω, VGS=-4.5V, RG=6Ω
VDS=-15V, RD=2.6Ω, VGS=-4.5V, RG=6Ω
VDS=-15V, RD=2.6Ω, VGS=-4.5V, RG=6Ω
14
2.3
5.5
10
37
36
52
Gate-Source Charge
Gate-Drain Charge
Turn-ON Delay
Turn-ON Rise Time
Turn-OFF Delay
nC
ns
Turn-OFF Fall Time
Source-Drain Diode Characteristics
2
VSD
IS
Source-Drain Forward Voltage
Continuous Diode Current
VGS=0, IS=-5.8A
-1.5
-1.5
V
A
1
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 10 second
pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RθJF + RθFA = RθJA
where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RθJF is guaranteed by design,
however RθCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design.
Note 2: Pulse test: Pulse Width = 300 µs
Note 3: Guaranteed by design. Not subject to production testing.
2
7157.2004.04.1.0
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