Low voltage, Low power, ±1% High detect accuracy CMOS Voltage Detector
Rev. E13-01
VDA Series
ELECTRICAL CHARACTERISTICS
(Ta=25°C unless otherwise specified)
Test
Items
Symbol
Conditions
Min.
0.7
Typ.
Max.
Unit
circuit
Operating voltage
V
IN
V
V
DET = 0.8V ~ 6.0V
DET = 1.8V ~ 6.0V
Ta = –40°C ~ +85°C
DET = 0.8V ~ 1.7V
Ta = –40°C ~ +85°C
-
6.0
V
1
V
DET
VDET
×1.01
VDET
VDET
VHYS
V
DET
V
×0.99
Detection voltage
Hysteresis range
1
1
V
V
DET
VDET
×1.02
V
V
DET
DET
V
×0.98
V
DET
VDET
×0.08
V
×0.02
×0.05
V
V
V
V
V
V
V
V
V
V
V
V
V
IN=0.7V
0.1
0.35
-
mA
mA
mA
mA
mA
mA
mA
mA
µA
IN=1.0V
IN=2.0V
IN=3.0V
IN=4.0V
IN=5.0V
IN=6.0V
IN=6.0V
IN=1.5V
IN=2.0V
IN=3.0V
IN=4.0V
IN=5.0V
1.0
2.3
8.2
-
-
3.0
N-ch
3
V
DS=0.5V
5.0
11.1
12.8
13.8
-9.5
9.5
-
Output current
IOUT
6.0
-
7.0
-
CMOS P-ch
-
-1.5
-
4
3
V
DS=2.1V
CMOS N-ch
1.5
V
DS=2.1V
-
-
-
-
-
-
-
-
-
0.6
2.1
2.5
2.8
3.0
3.4
100
-
0.7
µA
Current consumption
I
SS
0.8
µA
2
0.9
µA
1.0
µA
Leak current
I
LEAK
V
V
IN=6.0V VOUT=6.0V
DET = 1.8V ~ 6.0V
10
nA
3
1
5
±20
±100
0.03
ppm/°C
ppm/°C
ms
Ta = –40°C ~ +85°C
Detection voltage
temperature coefficient
∆VDET
∆Ta•VDET
/
V
DET = 0.8V ~ 1.7V
Ta = –40°C ~ +85°C
-
Delay time
TDLY
Inverts from VDR to VOUT
0.2
V
DR→VOUT inversion
AnaSem
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