Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
ELECTRICAL CHARACTERISTICS
(Ta=25°C unless otherwise specified)
Test
Items
Operating voltage
Detection voltage
Hysteresis range
Symbol
Conditions
Min.
0.7
Typ.
Max.
Unit
circuit
V
IN
V
V
DET = 1.8V ~ 6.0V
DET = 1.8V ~ 6.0V
-
6.0
V
1
V
DET
VDET
×1.01
V
DET
HYS
V
V
DET
DET
V
1
1
Ta = –40°C ~ +85°C
×0.99
V
DET
VDET
×0.08
V
V
×0.02
×0.05
V
V
V
V
V
V
V
V
V
V
V
V
V
IN=0.7V
0.1
0.4
-
mA
mA
mA
mA
mA
mA
mA
mA
µA
IN=1.0V
IN=2.0V
IN=3.0V
IN=4.0V
IN=5.0V
IN=6.0V
IN=6.0V
IN=1.5V
IN=2.0V
IN=3.0V
IN=4.0V
IN=5.0V
1.0
3.0
5.0
6.0
7.0
-
2.3
8.2
11.1
12.8
13.8
-9.5
9.5
0.6
0.7
0.8
0.9
1.0
10
-
-
N-ch
3
V
DS=0.5V
-
Output current
IOUT
-
-
CMOS P-ch
-1.5
-
4
3
V
DS=2.1V
CMOS N-ch
1.5
-
V
DS=2.1V
2.1
2.5
2.8
3.0
3.4
100
-
-
µA
Current consumption
I
SS
-
µA
2
-
µA
-
µA
Leak current
I
LEAK
V
V
IN=6.0V VOUT=6.0V
DET = 1.8V ~ 6.0V
-
nA
3
1
Detection voltage
temperature coefficient
∆VDET
/
-
±20
-
ppm/°C
ms
ms
ms
∆Ta•VDET Ta = –40°C ~ +85°C
10
50
80
50
200
400
Delay time
TDLY
V
IN = 0.7V ~ 6.0V
-
5
V
REL→VOUT inversion
-
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