欢迎访问ic37.com |
会员登录 免费注册
发布采购

APM2505NU 参数 Datasheet PDF下载

APM2505NU图片预览
型号: APM2505NU
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型MOSFET [N-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 10 页 / 185 K
品牌: ANPEC [ ANPEC ELECTRONICS COROPRATION ]
 浏览型号APM2505NU的Datasheet PDF文件第1页浏览型号APM2505NU的Datasheet PDF文件第3页浏览型号APM2505NU的Datasheet PDF文件第4页浏览型号APM2505NU的Datasheet PDF文件第5页浏览型号APM2505NU的Datasheet PDF文件第6页浏览型号APM2505NU的Datasheet PDF文件第7页浏览型号APM2505NU的Datasheet PDF文件第8页浏览型号APM2505NU的Datasheet PDF文件第9页  
APM2505NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
25
±20
150
-55 to 150
5
120
75
50
*
30
50
20
2.5
W
°C/W
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
P
D
R
θ
JC
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
A
A
Mounted on PCB of 1in
2
Pad Area
I
DP
I
D
P
D
R
θ
JA
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
T
A
=25°C
T
A
=100°C
120
75
17
10
2.5
1
50
120
75
14
9
1.6
0.6
75
W
°C/W
W
°C/W
A
A
Mounted on PCB of Minimum Footprint
I
DP
I
D
P
D
R
θ
JA
Note:
* Current limited by bond wire.
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
A
A
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
2
www.anpec.com.tw