APM3009NU
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM3009NU
Min.
Typ.
Max.
Test Condition
Unit
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
I
D
=11A, V
DD
=15V
30
1
30
1
1.5
7
11
2
±100
9
15
30
mJ
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
GS
=0V, I
DS
=250µA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250
µ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=35A
V
GS
=4.5V, I
DS
=20A
I
SD
=20A, V
GS
=0V
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
V
µ
A
V
nA
m
Ω
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Characteristics
V
SDa
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Q
g
Q
gs
Q
gd
Notes:
Diode Forward Voltage
0.7
1.3
V
Ω
pF
Dynamic Characteristics
b
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
1.2
1710
465
300
10
7
35
10
15
13
50
20
ns
Gate Charge Characteristics
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
40
V
DS
=15V, V
GS
=10V,
I
DS
=35A
4.8
8.4
52
nC
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
3
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
