APM3009NU
Typical Characteristics (Cont.)
Drain-Source On Resistance
2.0
1.8
V
GS
= 10V
I
DS
= 35A
Source-Drain Diode Forward
100
Normalized On Resistance
1.6
I
S
- Source Current (A)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
0
25
R
ON
@T
j
=25 C: 7m
Ω
50
75 100 125 150
o
10
T
j
=150 C
T
j
=25 C
o
o
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
j
- Junction Temperature (°C)
V
SD
- Source-Drain Voltage (V)
Capacitance
3000
Frequency=1MHz
Gate Charge
10
9
V
DS
=15V
I
D
=35A
V
GS
- Gate-source Voltage (V)
30
2500
8
7
6
5
4
3
2
1
C - Capacitance (pF)
2000
Ciss
1500
1000
Coss
Crss
0
0
5
10
15
20
25
500
0
0
5
10
15
20
25
30
35
40
V
DS
- Drain - Source Voltage (V)
Q
G
- Gate Charge (nC)
Copyright
©
ANPEC Electronics Corp.
Rev. B.2 - Oct., 2005
6
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
