APM3054N
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/15A, R
DS(ON)
=48mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=75mΩ(typ.) @ V
GS
=4.5V
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252 and SOT-223 Package
Pin Description
1
2
3
1
2
3
G
D
S
G
D
S
Top View of TO-252
Top View of SOT-223
Applications
•
•
1
2
3
Switching Regulators
Switching Converters
G
D
S
Top View of SOT-89
Ordering and Marking Information
A P M 3 054 N
H a n d lin g C o d e
Tem p. R ange
Package C ode
Package C ode
D : S O T -8 9
U : T O -2 5 2
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 2 5
°
C
H a n d lin g C o d e
TR : Tape & R eel
V : S O T -2 2 3
AP M 3054N U :
AP M 3054N
XXXXX
XXXXX
- D a te C o d e
A P M 3 0 5 4 N D /V :
AP M 3054N
XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
15
30
8
Unit
V
A
A
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
Diode Continuous Forward Current
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.2 - Aug., 2002
1
www.anpec.com.tw