APM4500
Typical Characteristics
P-Channel MOSFET
Output Characteristics
10
-V
GS
=3,4.5,6,7,8V
Transfer Characteristics
10
-I
D
-Drain Current (A)
6
-I
D-
Drain Current (A)
8
-V
GS
=2V
8
6
4
-V
GS
=1.5V
4
T
J
=25°C
T
J
=-55°C
2
-V
GS
=1V
2
T
J
=125°C
0
0
1
2
3
4
5
6
7
8
9
10
0
0.0
0.5
1.0
1.5
2.0
2.5
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-I
DS
=250µA
On-Resistance vs. Drain Current
0.16
-V
GS(th)-
Threshold Voltage (V)
(Normalized)
R
DS(ON)
-On-Resistance (Ω)
1.25
1.00
0.75
0.50
0.25
0.00
-50
0.14
0.12
0.10
-V
GS
=4.5V
-V
GS
=2.5V
0.08
0.06
0.04
0.02
0
2
4
6
8
10
-25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
-I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
7
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
