APM4500
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.20
-I
D
=4.3A
On-Resistance vs. Junction Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-V
GS
=4.5V
-I
D
=4.3A
R
DS(ON)
-On-Resistance (Ω)
0.16
0.14
0.12
0.10
0.08
0.06
0.04
1
2
3
4
5
6
7
8
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
0.18
0.2
-50
-25
0
25
50
75
100 125 150
-V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
5
Capacitance
800
700
Frequency=1MHz
-V
GS
-Gate-Source Voltage (V)
-V
DS
=10V
-I
D
=3A
4
Capacitance (pF)
600
Ciss
3
500
400
300
200
Coss
2
1
Crss
0
0
2
4
6
8
10
100
0
5
10
15
20
Q
G
- Gate Charge (nC)
-V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.2 - May., 2003
8
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
