APM4550K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation
T
A
=25°C
T
A
=100°C
V
GS
=±10V
(T
A
= 25°C unless otherwise noted)
N Channel
30
±20
7
30
2.5
150
-55 to 150
2
0.8
62.5
W
°C/W
P Channel
-30
±20
-5
-20
-2
A
°C
V
A
Unit
Thermal Resistance-Junction to Ambient
2
Note: *Surface Mounted on 1in
pad area, t
≤
10sec.
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
Test Condition
APM4550K
Min.
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
DS
=250µA
V
GS
=0V, I
DS
=-250µA
V
DS
=24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain
Current
T
J
=85°C
V
DS
=-24V, V
GS
=0V
T
J
=85°C
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
V
DS
=V
GS
, I
DS
=250µA
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=7A
R
DS(ON)
a
N-Ch
P-Ch
N-Ch
30
-30
1
30
-1
V
µA
P-Ch
-30
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
40
30
62
1
-1
1.5
-1.5
2
-2
±100
±100
27.5
50
40
80
mΩ
nA
V
Drain-Source On-State
Resistance
V
GS
=-10V, I
DS
=-5A
V
GS
=4.5V, I
DS
=5A
V
GS
=-4.5V, I
DS
=-4A
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - May, 2007
2
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
