APM4550K
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM4550K
Min.
Typ.
Max.
Unit
Test Condition
Diode Characteristics
V
SD
t
rr
Q
rr
a
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
Charge
b
I
SD
=2.5A, V
GS
=0V
I
SD
=-2A, V
GS
=0V
N-Channel
I
SD
=7A, dl
SD
/dt=100A/µs
N-Channel
I
SD
=-5A, dl
SD
/dt=100A/µs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
-0.8
8
13
3
5
1.3
-1.3
V
ns
nC
Dynamic Characteristics
R
G
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
N-Channel
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
N-Channel
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
P-Channel
V
DD
=-15V, R
L
=15Ω,
I
DS
=-1A, V
GEN
=-10V,
R
G
=6Ω
b
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
2
8.3
620
590
85
95
65
70
6
5
10
12
22
27
3
13
11
9
18
23
41
50
6
24
Ω
C
iss
Input Capacitance
C
oss
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
pF
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
N-Channel
V
DS
=15V, V
GS
=10V,
I
DS
=7A
P-Channel
V
DS
=-15V, V
GS
=-10V,
I
DS
=-5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
14
11
1.4
1.3
2.6
2.7
19
15
nC
Gate-Source Charge
Gate-Drain Charge
Notes:
a : Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
©
ANPEC Electronics Corp.
Rev. A.1 - May, 2007
3
www.anpec.com.tw
ANPEC [ ANPEC ELECTRONICS COROPRATION ]
