AO3414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
16
8V
10
4.5V
8
2V
I
D
(A)
3V
2.5V
6
4
4
V
GS
=1.5V
2
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
V
DS
(Volts)
Fig 1: On-Region Characteristics
100
Normalized On-Resistance
1.8
V
GS
=2.5
1.6
1.4
1.2
1
0.8
0
4
8
12
0
25
50
75
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
20
0
2
4
6
8
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
I
S
(A)
I
D
=4.2A
1E-01
1E-02
25°C
1E-03
1E+01
1E+00
125°C
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
I
D
=4.2A
V
GS
=1.8V
V
GS
=4.5V
V
GS
(Volts)
Figure 2: Transfer Characteristics
125°C
25°C
0
V
DS
=5V
12
I
D
(A)
8
80
R
DS(ON)
(m
Ω
)
V
GS
=1.8V
60
V
GS
=2.5V
40
V
GS
=4.5V
20
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
