AO3414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
0
0
2
4
6
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=10V
I
D
=4.2A
800
Capacitance (pF)
600
C
iss
400
200
C
oss
C
rss
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
0.1s
20
100µs
15
1ms
Power (W)
10µs
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
10.0
10
1.0
1s
10s
0.1
0.1
1
DC
10ms
5
10
V
DS
(Volts)
100
0
0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
P
D
T
on
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
