AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
I
D
(A)
15
10
5
V
GS
=3V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
80
70
R
DS(ON)
(m
Ω
)
60
50
40
30
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
102
90
78
66
I
D
=4.2A
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
1.0E-02
125°C
25°C
Normalized On-Resistance
V
GS
=4.5V
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=4.5V
Id=3.5A
V
GS
=10V
Id=4.2A
0
0
1
2
3
4
5
6
V
GS
(Volts)
Figure 2: Transfer Characteristics
8V
6V
4.5V
I
D
(A)
4V
3.5V
15
12
9
6
125°C
3
25°C
V
DS
=5V
V
GS
=10V
125°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
1.0E-03
54
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS25°CUSES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
OR
1.0E-04
42
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
30
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
R
DS(ON)
(m
Ω
)
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
