AO3703
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-2.7A
T
J
=125°C
-0.3
-10
-0.6
76
111
101
134
7
-0.78
Min
-20
-1
-5
±100
-1
97
135
130
190
-1
-2
Typ
Max
Units
V
µΑ
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.5
0.1
20
34
5.2
0.8
10
V
mA
pF
ns
nC
g
FS
V
SD
I
S
V
GS
=-2.5V, I
D
=-2A
V
GS
=-1.8V, I
D
=-1A
Forward Transconductance
V
DS
=-5V, I
D
=-2.7A
Diode Forward Voltage
I
S
=-1A,V
GS
=0V
Maximum Body-Diode Continuous Current
Static Drain-Source On-Resistance
4
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
R
g
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
I
rm
C
T
t
rr
Q
rr
Maximum reverse leakage current
Junction Capacitance
Schottky Reverse Recovery Time
Schottky Reverse Recovery Charge
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
540
72
49
12
6.1
0.6
1.6
10
12
44
22
21
7.5
0.39
V
GS
=-4.5V, V
DS
=-10V, I
D
=-2.7A
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.8Ω,
R
GEN
=3Ω
I
F
=-2.7A, dI/dt=100A/µs
I
F
=-2.7A, dI/dt=100A/µs
I
F
=0.5A
V
R
=16V
V
R
=16V, T
J
=125°C
V
R
=10V
I
F
=1A, dI/dt=100A/µs
I
F
=1A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating. Rev0: July 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICA
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
