AO4459
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
-I
D
(A)
20
15
V
GS
=-3.5V
10
2
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
100
Normalized On-Resistance
1.6
V
GS
=-10V
I
D
=-6.5A
V
GS
=-4.5V
I
D
=-5A
0
0
1
2
3
4
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-40°C
-4.5V
-4V
-I
D
(A)
6
125°C
-10V
-8V
-5V
10
V
DS
=-5V
8
4
25°C
80
R
DS(ON)
(m
Ω
)
V
GS
=-4.5V
60
V
GS
=-10V
40
1.4
1.2
1.0
0.8
20
0
2
4
=-6.5A, dI/dt=100A/µs
I
F
6
8
10
0.6
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
160
140
120
R
DS(ON)
(m
Ω
)
-I
S
(A)
100
I
D
=-6.5A
1E+01
1E+00
1E-01
1E-02
125°C
125°C
80
1E-03
25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
60
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
25°C
-40°C
-40°C
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
40
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
20
1E-06
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
GS
(Volts)
-V
SD
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.