AO4476
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
4.5V
50
40
I
D
(A)
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
18
Normalized On-Resistance
1.6
1.4
1.2
1
0.8
0.6
25
30
-50
-20
10
40
70
100
130
160
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
20
15
10
5
2
4
6
8
10
12
14
16
18
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
125°C
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
=4.5
V
GS
=10V
I
D
=15A
V
GS
=4.5
7V
10V
4V
I
D
(A)
30
25
20
15
10
5
0
1
1.5
2
2.5
3
3.5
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
125°
V
DS
=5V
V
GS
=3.5V
15
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
12
9
V
GS
=10V
0
5
10
15
20
V
GS
=10V
6
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
R
DS(ON)
(m
Ω
)
I
D
=15A
125°C
25°C
25°C
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
