AO4622
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
25
-10V
20
15
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
80
70
V
GS
=-2.5V
R
DS(ON)
(m
Ω
)
60
50
40
30
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
I
D
=-5A
1.0E+02
1.0E+01
1.0E+00
60
R
DS(ON)
(m
Ω
)
125°C
-I
S
(A)
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
20
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
-40°C
125°C
V
GS
=-4.5V
Normalized On-Resistance
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=-2.5V
-3.5V
-4.5V
-6V
-I
D
(A)
V
GS
=-2.5V
10
25°C
5
125°C
0
0.5
1.0
1.5
2.0
2.5
3.0
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-40°C
15
V
DS
=-5V
20
-I
D
(A)
I
D
=-5A
V
GS
=-4.5V
I
D
=-4.2A
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
