AO4705
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±25V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-10A
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125°C
V
GS
=-20V, I
D
=-10A
V
GS
=-4.5V, I
D
=-10A
g
FS
V
SD
I
S
Forward Transconductance
V
DS
=-5V, I
D
=-10A
I
S
=-1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
-1.7
60
13
16
10.7
25
26
-0.72
-1
-4.2
2076
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
503
302
2
37.2
V
GS
=-10V, V
DS
=-15V, I
D
=-10A
7
10.4
12.4
V
GS
=-10V, V
DS
=-15V, R
L
=1.0Ω,
R
GEN
=3Ω
I
F
=-10A, dI/dt=100A/µs
8.2
25.6
12
33
23
0.48
0.07
4.2
15
120
0.52
0.15
20
60
pF
mA
16
21
14
-2.5
Min
-30
-1
-5
±100
-3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-10A, dI/dt=100A/µs
I
F
=3.0A
V
R
=24V
V
R
=24V, T
J
=125°C
V
R
=24V, T
J
=150°C
C
T
Junction Capacitance
V
R
=15V
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
I
rm
Maximum reverse leakage current
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s
thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
The SOA curve provides a single pulse rating.
Rev 4: June 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
