AO4705
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
-10V
40
30
20
10
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
25
V
GS
=-6V
Normalized On-Resistance
1.6
I
D
=-10A
20
R
DS(ON)
(m
Ω
)
1.4
V
GS
=-10V
-8V
-6V
-5.5V
-5V
-I
D
(A)
-I
D
(A)
25
V
DS
=-5V
20
15
10
125°C
-4.5V
V
GS
=-4V
5
25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
15
V
GS
=-10V
V
GS
=-20V
1.2
10
V
GS
=-20V
5
0
5
10
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
60
I
D
=-10A
50
40
30
20
10
0
4
5
6
7
8
9
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
125°C
25°C
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
1.0E+00
1.0E-01
-I
S
(A)
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
R
DS(ON)
(m
Ω
)
125°C
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
