AO4800A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
V
GS
(Volts)
3
2
1
200
0
0
2
4
6
8
10
12
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1400
V
DS
=15V
I
D
=6.9A
Capacitance (pF)
1200
1000
800
600
400
C
rss
C
oss
C
iss
100.0
R
DS(ON)
limited
I
D
(Amps)
10.0
10µs
1.0
DC
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
T
J(Max)
=150°C
T
A
=25°C
50
40
Power (W)
30
20
10
0
100
0.0001 0.001
0.01
0.1
1
10
100
1000
T
J(Max)
=150°C
T
A
=25°C
1ms
10ms
10s
1s
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
P
D
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
0.1
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
T
on
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
