AO4918
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
10V
30
I
D
(A)
4.5V
2.5V
20
V
GS
=2V
10
I
D
(A)
30
25
20
15
125°C
10
5
25°C
V
DS
=5V
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
0
0.5
1
1.5
2
2.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
14
Normalized On-Resistance
1.8
1.6
1.4
V
GS
=10V
1.2
1
0.8
0
50
100
150
200
Temperature (°C)
Figure 4: On resistance vs. Junction Temperature
I
D
=9.3A
V
GS
=4.5V
13
R
DS(ON)
(m
Ω
)
V
GS
=4.5V
12
V
GS
=10V
11
10
0
5
10
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
R
DS(ON)
(m
Ω
)
20
125°C
15
25°C
10
5
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On resistance vs. Gate-Source Voltage
I
D
=9.3A
I
S
(A)
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note F)
FET+SCHOTTKY
25°C
125°C
Alpha Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
