AO4924
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
80
60
40
20
0
30
25
20
15
10
5
VDS=5V
10V
6V
4.5V
4V
3.5V
VGS=3V
125°
25°C
3
0
0
1
2
3
4
5
1
1.5
2
2.5
3.5
4
V
DS (Volts)
V
GS(Volts)
DYNAMIC PARAMETERS
Figure 1: On-Region Characteristics
Figure 2: Transfer Characteristics
20
17
14
11
8
2
VGS=10V
ID=9A
VGS=4.5V
1.8
1.6
1.4
1.2
1
VGS=4.5V
ID=7A
VGS=10V
0.8
0
5
10
15
20
25
30
0
30
60
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
90
120
150
180
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
45
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
40
35
30
25
20
15
10
5
ID=9A
125°C
25°C
125°C
25°C
0.0
0.2
0.4
VSD (Volts)
Figure 6: Body-Diode Characteristics
0.6
0.8
1.0
2
4
6
8
10
V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
