AO4924
FET2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
1200
1000
800
600
400
200
0
5
4
3
2
1
0
VDS=15V
ID=7.3A
Ciss
Crss
Coss
0
2
4
6
8
10
12
0
5
10
15
DS (Volts)
20
25
30
Qg (nC)
Figure 7: Gate-Charge Characteristics
V
Figure 8: Capacitance Characteristics
100.00
10.00
1.00
50
10µs
TJ(Max)=150°C
TA=25°C
100µs
1ms
1s
40
30
20
10
0
RDS(ON)
limited
10s
DC
0.10
TJ(Max)=150°C
TA=25°C
0.01
0.0001 0.001 0.01
0.1
1
10
100
1000
0.01
0.1
1
10
100
Pulse Width (s)
VDS (Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
D
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.01
Ton
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
RθJA=90°C/W
T
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
