AO6700
MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=4.5V
4
V
GS
(Volt
s)
3
2
1
0
0
1
2
3
4
Qg (nC)
Figure 7: Gate-Charge Characteristics
800
I
D
=4.1A
Capacitance (pF
)
700
600
500
400
300
200
100
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
C
oss
C
iss
100
R
DS(ON)
limited
Power (W)
100
10
I
D
(A)
0.1s
1
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
1s
10s
DC
1ms
10ms
100µs
10µs
12
10
8
6
4
2
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
