AO8403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
15
10
V
GS
=-1.5V
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
80
Normalized On-Resistance
V
GS
=-1.8V
R
DS(ON)
(m
Ω
)
60
V
GS
=-2.5V
40
V
GS
=-4.5V
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
100
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
20
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
I
D
=-4A
-I
S
(A)
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
25°C
125°C
1.6
I
D
=-4A, V
GS
=-2.5V
1.4
I
D
=-2A, V
GS
=-1.8V
2
0
0
0.5
1
1.5
2
-V
GS
(Volts)
Figure 2: Transfer Characteristics
25°C
-8V
-4.5V
-3.0V
-2.0V
-I
D
(A)
-I
D
(A)
-2.5V
6
4
125°C
10
V
DS
=-5V
8
1.2
I
D
=-4A, V
GS
=-4.5V
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
