AOL1420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
10
20
30
40
50
60
70
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=15V
I
D
=20A
Capacitance (pF)
5000
4000
C
iss
3000
2000
C
oss
1000
C
rss
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
1000
10μs
100
Power (W)
I
D
(Amps)
100μs
10
R
DS(ON)
limited
T
J(Max)
=175°C
T
C
=25°C
1ms
10ms
DC
1
1000
800
600
400
200
0
0.0001 0.001
T
J(Max)
=175°C
T
C
=25°C
0.1
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
100
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJA
=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
T
on
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
