AOP610
P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
-V
GS
(Volts)
V
DS
=-15V
I
D
=-6.2A
Capacitance (pF)
1500
1250
C
iss
1000
750
500
250
0
0
4
8
12
16
20
0
5
10
15
20
25
30
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
6
4
2
0
100.0
T
J(Max)
=150°C, T
A
=25°C
R
DS(ON)
limited
0.1s
1.0
10µs
100µs
1ms
10ms
1s
10s
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
DC
40
T
J(Max)
=150°C
T
A
=25°C
30
Power (W)
-I
D
(Amps)
10.0
20
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=55°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
100
1000
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
