AOT12N60 / AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
I
D
(A)
15
10
5
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
1.0
2.5
V
GS
=5.5V
0.1
2
4
6
8
10
I
D
(A)
6V
6.5V
10
125°C
100
V
DS
=40V
-55°C
1
25°C
V
GS
(Volts)
Figure 2: Transfer Characteristics
200
16
Normalized On-Resistance
0.8
R
DS(ON)
(m
Ω
)
2
V
GS
=10V
I
D
=6A
1.5
0.6
V
GS
=10V
1
0.4
0.5
0.2
0
5
10
I
F
=12A,dI/dt=100A/µs,V
DS
=100V
I
F
=12A,dI/dt=100A/µs,V
DS
=100V
0
15
20
25
-100
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
125°C
1.2
BV
DSS
(Normalized)
1.1
1.0E+00
I
S
(A)
1
1.0E-01
1.0E-02
0.9
1.0E-03
0.8
-100
1.0E-04
-50
0
50
100
150
200
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
50
25°C
T
J
(
o
C)
Figure 5: Break Down vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
