AOT12N60 / AOTF12N60
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
12
9
10000
1000
100
VDS=480V
ID=12A
Ciss
Coss
6
Crss
3
0
10
0
10
20
30
40
50
60
0.1
1
10
100
Qg (nC)
VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics
200
16
100
100
10
1
10µs
10µs
RDS(ON)
limited
RDS(ON)
limited
10
1
100µs
100µs
1ms
1ms
10ms
0.1s
1s
10ms
0.1s
DC
DC
0.1
0.01
0.1
10s
TJ(Max)=150°C
TC=25°C
TJ(Max)=150°C
TC=25°C
IF=12A,dI/dt=100A/µs,VDS=100V
IF=12A,dI/dt=100A/µs,VDS0=.01100V
1
10
100
1000
1
10
100
1000
VDS (Volts)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT12N60 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF12N60 (Note F)
14
12
10
8
50
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 11: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
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