AOZ9004B
Block Diagram
EB+
R1
220Ω
VDD
Over-
Discharge
Comp
Oscillator
Counter/
Logic
0V Battery
Charge
Function
Single-Cell
Lithium-Ion/
Lithium Polymer
Battery
VDD
C1
0.1μF
Over-Charge
Comp
VSS
Charger
Detection
Discharge
Over-Current
Comp
R
VDM
Charge
Over-Current
Comp
Short-Circuit
Comp
VM
R
VMS
R2
2kΩ
Battery Protection IC
N2
N1
OUTM
EB-
AOZ9004B
Dual Common-Drain MOSFET
Figure 2. AOZ9004B Function Block Diagram
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
V
DD
to V
SS
V
M
to V
DD
MOSFET Gate-to-Source Voltage
Continuous Drain Current
(4)
(R
θJA
= 95°C/W, T
A
= 25°C)
(R
θJA
= 95°C/W, T
A
= 85°C)
Pulsed Drain Current
Storage Temperature (T
S
)
Operating Temperature (T
A
)
Power Dissipation
(6)
(R
θJA
= 95°C/W, T
A
= 25°C)
(R
θJA
= 95°C/W, T
A
= 85°C)
Rating
-0.3V to +12V
-28V to +0.3V
-0.3V to +12V
5A
3A
30A
-55°C to +125°C
-40°C to +85°C
1.1W
0.5W
Note:
6. The value of R
θJA
is measured with the device mounted on 1-in
2
FR-4 board with 2-oz. copper, in a still air
environment with T
A
= 25°C. The value in any given application depends on the user’s specific board design.
Rev. 1.2 August 2008
www.aosmd.com
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AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
