AOZ9004B
Typical Performance Characteristics
On-Regions Characteristics
30
10V
25
4V
20
I
D
(A)
Transfer Characteristics
20
2.5V
3V
15
I
D
(A)
V
DD
=2V
01
2
3
45
15
10
10
5
5
0
0
00
.5
11
.5
22
.5
V
DS
(Volts)
V
DD
(Volts)
On-Resistance vs. Drain Current and Gate Voltage
70
60
50
R
SS(ON)
(mΩ )
On-Resistance vs. Junction Temperature
1.8
V
DD
=4.5V
I
D
=6A
1.4
V
DD
=2.5V
I
D
=3A
1.2
V
DD
=2.5V
40
30
20
10
0
0
5
10
I
D
(A)
15
20
V
DD
=4.5V
Normalized On-Resistance
1.6
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
On-Resistance vs. Gate-Source Voltage
120
I
D
=3A
100
80
Body-Diode Characteristics
1.0E+01
125°C
1.0E+00
1.0E-01
25°C
R
SS(ON)
(mΩ)
I
S
(A)
60
125°C
40
25°C
20
0
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0
2
4
6
V
DD
(Volts)
8
10
0.2
0.4
0.6
0.8
V
SD
(Volts)
1.0
1.2
Rev. 1.2 August 2008
www.aosmd.com
Page 8 of 17
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
