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STD123N 参数 Datasheet PDF下载

STD123N图片预览
型号: STD123N
PDF下载: 下载PDF文件 查看货源
内容描述: 外延平面型硅NPN晶体管 [Epitaxial planar NPN silicon transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 213 K
品牌: AUK [ AUK CORP ]
 浏览型号STD123N的Datasheet PDF文件第1页浏览型号STD123N的Datasheet PDF文件第3页  
STD123N
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
20
15
6.5
1
400
150
-55~150
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
On resistance
Symbol
BV
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
R
ON
Test Condition
I
C
=1mA, I
B
=0
V
CB
=20V, I
E
=0
V
EB
=6.5V, I
C
=0
V
CE
=1V, I
C
=100mA
I
C
=500mA, I
B
=50mA
V
CE
=1V, I
C
=100mA
V
CE
=5V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
f=1KHz, I
B
=1mA, V
IN
=0.3V
Min. Typ. Max.
15
-
-
150
-
-
-
-
-
-
-
-
-
0.1
0.75
260
5
0.6
-
0.1
0.1
-
0.3
1.0
-
-
-
Unit
V
µA
µA
-
V
V
MHz
pF
KSD-T0C004-001
2