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AS5C4009DG-55/XT 参数 Datasheet PDF下载

AS5C4009DG-55/XT图片预览
型号: AS5C4009DG-55/XT
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8 SRAM超低功耗SRAM [512K x 8 SRAM Ultra Low Power SRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 12 页 / 103 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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SRAM
Austin Semiconductor, Inc.
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capactiance
CONDITIONS
o
T
A
= 25 C, f = 1MHz
V
CC
= 5V
AS5C4009
SYMBOL
V
IN
=0V
V
IO
=0V
C
IN
C
IO
MAXIMUM
8
10
UNITS
pF
pF
NOTES
4
4
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55
o
C < T
A
< 125
o
C; Vcc = 5V +10%)
DESCRIPTION
READ Cycle
READ cycle Time
Address access time
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
Output Enable access time
Output Enable to output in Low-Z
Output disable to output in High-Z
WRITE Cycle
WRITE cycle time
Chip Enable to end of write
Address valid to end of write
Address setup time
Address hold from end of write
WRITE pulse width
Data setup time
Data hold time
Write disable to output in Low-Z
Write Enable to output in High-Z
SYM
t
RC
t
AA
t
ACE
t
OH
t
LZCE
t
HZCE
t
PU
t
PD
t
AOE
t
LZOE
t
HZOE
t
WC
t
CW
t
AW
t
AS
t
AH
t
WP1
t
DS
t
DH
t
LZWE
t
HZWE
-55
MIN MAX
55
55
55
10
10
20
0
55
30
5
20
55
50
50
0
0
50
30
0
5
25
-70
MIN MAX
70
70
70
10
10
25
0
70
35
5
25
70
60
60
0
0
60
30
0
5
25
-85
MIN MAX
85
85
85
10
10
30
0
85
40
5
30
85
70
70
0
0
70
35
0
5
30
-100
MIN MAX UNITS NOTES
100
100
100
10
10
30
0
100
45
5
30
100
80
80
0
0
80
40
0
5
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
4,6
4,6
4,6
4,6
4,6
4,6
4
4
AS5C4009
Rev. 5.1 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4