AUSTIN SEMICONDUCTOR, INC.
Austin Semiconductor, Inc.
BLOCK DIAGRAM
68-Ld. CQFP, Package "QT"
WE1\ CS1\
RESET\
OE\
A0-Ax
WE2\ CS2\
WE3\ CS3\
WE4\ CS4\
AS8FLC1M32
FLASH
before executing the erase operation. During erasure, the
device automatically times the erase pulse widths and verifies
proper cell margin.
The host system can detect whether a program or erase
operation is complete by observing the RY/BY\ pin, or by
reading the DQ7 (Data\ Polling) and DQ6 (toggle) STATUS
BITS. After a program or erase cycle has been completed, the
device is ready to read array data or accept another command.
The SECTOR ERASE ARCHITECTURE allows memory
sectors to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully erased
when shipped from ASI.
Hardware data protection measures include a low VCC
detector that automatically inhibits WRITE operations during
power transitions. The hardware sector protection features
disables both program and erase operation in any combination
of the sectors of memory. This can be achieved in-system or
via specially adapted commercial programming equipment.
The ERASE SUSPEND feature enables the user to put erase on
hold for any period of time to read data from, or program data
to, any sector which is not selected for erasure. True
BACKGROUND ERASE can thus be achieved.
The HARDWARE RESET\ PIN terminates any operation in
progress and resets the internal state machine to a READ
operation. The RESET\ pin may be tied to the system reset
circuitry.
1M x 8
1M x 8
1M x 8
1M x 8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
BLOCK DIAGRAM
P
66-Ld. HIP, Package "H"
CS1\
WE\
RESET\
OE\
A0-Ax
CS2\
CS3\
CS4\
1M x 8
1M x 8
1M x 8
1M x 8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
The device requires only a single 3.3volt power supply for
both READ and WRITE operations. Internally generated and
regulated voltages are provided for the program and erase
functions.
The device is entirely command set compatible with the
JEDEC SINGLE POWER FASH STANDARD. Commands are
written to the command register using standard
microprocessor write timings. Register contents serve as
input to an internal state-machine that controls the erase and
programming circuitry. Write cycles also internally latch
addresses and data required for the programming or erase
function(s). Reading data out of the array is similar to reading
from other electrically programmable devices.
Device programming occurs by executing the program command
sequence. This initiates the EMBEDDED PROGRAM algorithm
that automatically times the WRITE PULSE widths and cycle
and verifies each cell for proper cell margins. The UNLOCK
BYPASS mode facilitates faster programming times by requiring
only two WRITE cycles to program data instead of four.
Device erasure occurs by executing the erase command
sequence. This initiates the Embedded Erase algorithm, an
internal algorithm that automatically pre-programs the array
AS8FLC1M32B
Rev. 3.3 05/08
LOGIC DIAGRAM (Byte)
VCC
GND
DQ (byte)
RY/BY\
RESET\
State
Control
Command
Register
Erase Voltage
Generator
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
Sector
Switches
Address Latch
Y-Decoder
I/O Buffers
WEx\
Data Latch
CSx\
OE\
Y-Gating
VCC Detector
Timer
X-Decoder
Cell Matrix
A0-Ax
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
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