DRAM
Austin Semiconductor, Inc.
MT4C4001J
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(NOTES: 6, 7, 8, 9, 10, 11, 12, 13) (-55°C < T
C
< 125°C; V
CC
= 5V ±10%)
-7
PARAMETER
Write command hold time
Write command hold time (referenced to RAS\)
Write command pulse width
Write command to RAS\ lead time
Write commend to CAS\ lead time
Data-in setup time
Data-in hold time
Data-in hold time (referenced to RAS\)
RAS\ to WE\ delay time
Column address to WE\ delay time
CAS\ to WE\ delay time
Transition time (rise or fall)
Refresh period (1,024 cycles)
RAS\ to CAS\ precharge time
CAS\ setup time (CAS\-BEFORE-RAS\ REFRESH)
CAS\ hold time (CAS\-BEFORE-RAS\ REFRESH)
WE\ hold time (CAS\-BEFORE-RAS\ REFRESH)
WE\ setup time (CAS\-BEFORE-RAS\ REFRESH)
WE\ hold time (WCBR test cycle)
WE\ setup time (WCBR test cycle)
OE\ setup prior to RAS during HIDDEN REFRESH cycle
Output disable
Output enable
OE\ hold time from WE\ during READ-MODIFY-WRITE cycle
SYM
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
t
RWD
t
AWD
t
CWD
t
T
t
REF
t
RPC
t
CSR
t
CHR
t
WRH
t
WRP
t
WTH
t
WTS
t
ORD
t
OD
t
OE
t
OEH
20
0
5
10
10
10
10
10
0
15
15
20
MIN
15
50
15
20
20
0
12
50
95
60
45
3
50
16
0
10
15
10
10
10
10
0
20
20
25
MAX
MIN
15
60
15
20
20
0
15
60
105
65
45
3
50
16
0
10
20
10
10
10
10
0
25
25
25
-8
MAX
MIN
20
70
20
25
25
0
18
70
130
80
55
3
50
16
0
10
25
10
10
10
10
0
25
25
-10
MAX
MIN
25
80
25
30
30
0
25
90
140
90
60
3
50
16
-12
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
27
23
26
5
5
25, 28
25, 28
25, 28
25, 28
21
21
21
22
22
NOTES
MT4C4001J
Rev. 1.5 10/02
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
AUSTIN [ AUSTIN SEMICONDUCTOR ]
