SRAM
Austin Semiconductor, Inc.
16K x 4 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-86859
• MIL-STD-883
MT5C6405
PIN ASSIGNMENT
(Top View)
24-Pin DIP (C)
(300 MIL)
A5
A6
A7
A8
A9
A10
A11
A12
A13
CE\
OE\
Vss
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A4
A3
A2
A1
A0
NC
DQ4
DQ3
DQ2
DQ1
WE\
FEATURES
• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns
• Battery Backup: 2V data retention
• High-performance, low-power CMOS double-metal
process
• Single +5V (+10%) Power Supply
• Easy memory expansion with CE\
• All inputs and outputs are TTL compatible
28-Pin LCC (EC)
A5
NC
NC
Vcc
NC
3 2 1 28 27
OPTIONS
• Timing
12ns access
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
• Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
MARKING
-12
-15
-20
-25
-35
-45*
-55*
-70*
A6 4
A7 5
A8 6
A9 7
A10 8
A11 9
A12 10
A13 11
CE\ 12
26
25
24
23
22
21
20
19
18
NC
A4
A3
A2
A1
A0
DQ4
DQ3
DQ2
13 14 15 16 17
DQ1
WE\
NC
Vss
OE\
C
EC
No. 106
No. 204
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Austin Semiconductor SRAMs are fabricated
using double-layer metal, double-layer polysilicon
technology.
For flexibility in high-speed memory applications, Austin
Semiconductor offers chip enable (CE\) and output enable
(OE\) capability. These enhancements can place the outputs
in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write
enable (WE\) and CE\ inputs are both LOW. Reading is
accomplished when WE\ remains HIGH and CE\ and OE\ go
LOW. The device offers a reduced power standby mode when
disabled. This allows system designs to achieve low standby
power requirements.
All devices operate from a single +5V power supply and
all inputs and outputs are fully TTL compatible.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
• Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
IT
o
o
Military (-55 C to +125 C)
XT
• 2V data retention/low power
L
*Electrical characteristics identical to those provided for the 35ns
access devices.
For more products and information
please visit our web site at
www.austinsemiconductor.com
MT5C6405
Rev. 2.1 06/05
1
AUSTIN [ AUSTIN SEMICONDUCTOR ]
