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SMJ44C251B12HJM 参数 Datasheet PDF下载

SMJ44C251B12HJM图片预览
型号: SMJ44C251B12HJM
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×4 VRAM 256K ×4的DRAM 512K ×4的SAM [256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM]
分类和应用: 动态存储器
文件页数/大小: 57 页 / 1255 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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VRAM  
SMJ44C251B  
MT42C4256  
Austin Semiconductor, Inc.  
FIGURE 1: EXAMPLE OF WRITE-PER-BIT OPERATIONS  
DQ Mask = H: Write to I/O enable  
= L: Write to I/O disable  
FIGURE 2: EXAMPLE BLOCK-WRITE DIAGRAM OPERATIONS  
NOTES:  
* W\ must be low during the block-write cycle.  
DQ0–DQ3 are latched on the later of W\ or CAS\ falling edge except in block 6 (see legend).  
LEGEND:  
1. Refresh address  
2. Row address  
3. Block address (A2 –A8)  
4. Color-register data  
5. Column-mask data  
6. DQ-mask data. DQ0–DQ3 are latched on the falling edge of RAS\.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
SMJ44C251B/MT42C4256  
Rev. 0.1 12/03  
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