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SMJ44C251B12HJM 参数 Datasheet PDF下载

SMJ44C251B12HJM图片预览
型号: SMJ44C251B12HJM
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×4 VRAM 256K ×4的DRAM 512K ×4的SAM [256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM]
分类和应用: 动态存储器
文件页数/大小: 57 页 / 1255 K
品牌: AUSTIN [ AUSTIN SEMICONDUCTOR ]
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VRAM  
SMJ44C251B  
MT42C4256  
Austin Semiconductor, Inc.  
WRITE-MASK SELECT, WRITE ENABLE (W\)  
(continued)  
For transfer operation, W\ selects either a read-transfer  
operation (DRAM to SAM) or a write-transfer operation (SAM  
to DRAM). During a transfer cycle, if W is high when RAS\  
falls, a read transfer occurs; if W is low, a write transfer occurs.  
serial-output mode, data in SAM is accessed from the least  
significant bit to the most significant bit. The data registers  
operate modulo 512; so after bit 511 is accessed, the next bits to  
be accessed are 00, 01, 02, etc. If the previous transfer cycle was  
either a write transfer or a pseudo transfer, the data register is in  
serial-input mode and signal data can be input to the register.  
SPECIAL FUNCTION SELECT (DSF)  
SERIAL CLOCK (SC)  
DSF is latched on the falling edge of RAS\ or CAS\, similar  
to an address. DSF determines which of the following functions  
are invoked on a particular cycle:  
Serial data is accessed in or out of the data register on the  
rising edge of SC. The SMJ44C251B/MT42C4256 is designed  
to work with a wide range of clock-duty cycles to simplify  
system design. There is no refresh requirement because the  
data registers that comprise the SAM are static. There is also  
no minimum SC clock operating frequency.  
Persistent write-per-bit  
Block write  
Split-register transfer read  
Mask-register load for the persistent write-per-bit mode  
Color-register load for the block-write mode  
SERIAL ENABLE (SE\)  
During serial-access operations SE\ is used as an enable/  
disable for SDQ in both the input and output modes. If SE\ is  
held as RAS\ falls during a write-transfer cycle, a pseudo-  
transfer write occurs. There is no actual transfer, but the data  
register switches from the output mode to the input mode.  
DRAM DATAI/O, WRITE-MASK DATA (DQ0–DQ3)  
DRAM data is written via DQ terminals during a write or  
read-modify-write cycle. In an early-write cycle, W\ is brought  
low prior to CAS\ and the data is strobed in by CAS\ with data  
setup and hold times referenced to this signal. In a delayed-  
write or read-modify-write cycle, W\ is brought low after CAS\  
and the data is strobed in by W\ with data setup and hold times  
referenced to this signal.  
The 3-state DQ output buffers provide direct TTL  
compatibility (no pullup resistors) with a fanout of two Series 54  
TTL loads. Data out is the same polarity as data in. The outputs  
are in the high-impedance (floating) state as long as CAS\ and  
TRG\ are held high. Data does not appear at the outputs until  
both CAS\ and TRG\ are brought low. Once the outputs are  
valid, they remain valid while CAS\ and TRG\ are low. CAS\ or  
TRG\ going high returns the outputs to the high-impedance  
state. In a register-transfer operation, the DQ outputs remain in  
the high-impedance state for the entire cycle.  
NO CONNECT/GROUND (NC/GND)  
NC/GND is reserved for the manufacturer’s test operation.  
It is an input and should be tied to system ground or left  
floating for proper device operation.  
SPECIAL FUNCTION OUTPUT (QSF)  
During split-register operation the QSF output indicates  
which half of the SAM is being accessed. When QSF is low, the  
serial-address pointer is accessing the lower (least significant)  
256 bits of SAM. When QSF is high, the serial-address pointer  
is accessing the higher (most significant) 256 bits of SAM. QSF  
changes state upon crossing the boundary between the two  
SAM halves in the split-register mode.  
During normal transfer operations QSF changes state upon  
completing a transfer cycle. This state is determined  
by the tap point being loaded during the transfer cycle.  
The write-per-bit mask is latched into the device via the  
random DQ terminals by the falling edge of RAS\. This mask  
selects which of the four random I/Os are written.  
POWER UP  
SERIAL DATAI/O (SDQ0–SDQ3)  
To achieve proper device operation, an initial pause of  
200ms is required after power-up, followed by a minimum of  
eight RAS\ cycles or eight CBR cycles, a memory-to-register  
transfer cycle, and two SC cycles.  
Serial inputs and serial outputs share common I/O  
terminals. Serial-input or serial-output mode is determined by  
the previous transfer cycle. If the previous transfer cycle was a  
read transfer, the data register is in serial-output mode. While in  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
SMJ44C251B/MT42C4256  
Rev. 0.1 12/03  
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