BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= 4 V
T
C
= 25°C
t
p
= 300 µs, duty cycle < 2%
TCS633AJ
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
10
TCS633AB
I
C
=
I
C
=
I
C
=
I
C
=
1A
3A
6A
10 A
h
FE
- DC Current Gain
100
1·0
10
0·1
1·0
0·1
1·0
I
C
- Collector Current - A
10
0·01
0·01
0·1
1·0
10
I
B
- Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·8
V
CE
= 4 V
T
C
= 25°C
V
BE
- Base-Emitter Voltage - V
1·6
TCS633AC
1·4
1·2
1·0
0·8
0·6
0·1
1
I
C
- Collector Current - A
10
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
