BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
Collector-emitter
breakdown voltage
TEST CONDITIONS
BD744
V
(BR)CEO
I
C
= -30 mA
I
B
= 0
(see Note 5)
BD744A
BD744B
BD744C
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
I
CBO
Collector cut-off
current
V
CE
= -110 V
V
CE
= -50 V
V
CE
= -70 V
V
CE
= -90 V
V
CE
= -110 V
I
CEO
I
EBO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= -30 V
V
CE
= -60 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
I
B
=
I
B
=
V
CE
=
V
CE
=
-5 V
-4 V
-4 V
-4 V
-0.5 A
-5 A
-4 V
-4 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= -1 A
I
C
= -5 A
I
C
= -15 A
I
C
= -5 A
I
C
= -15 A
I
C
= -5 A
I
C
= -15 A
I
C
= -1 A
I
C
= -1 A
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
f = 1 MHz
25
5
(see Notes 5 and 6)
40
20
5
-1
-3
-1
-3
V
V
150
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
T
C
= 125°C
BD744
BD744A
BD744B
BD744C
BD744
BD744A
BD744B
BD744C
BD744/744A
BD744B/744C
MIN
-45
-60
-80
-100
-0.1
-0.1
-0.1
-0.1
-5
-5
-5
-5
-0.1
-0.1
-0.5
mA
mA
mA
V
TYP
MAX
UNIT
h
FE
V
CE(sat)
V
BE
h
fe
V
CE
= -10 V
V
CE
= -10 V
|
h
fe
|
NOTES: 5. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θJC
R
θJA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
1.4
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
d
t
r
t
s
t
f
†
TEST CONDITIONS
I
C
= -5 A
V
BE(off)
= 4.2 V
I
B(on)
= -0.5 A
R
L
= 6
Ω
†
MIN
I
B(off)
= 0.5 A
t
p
= 20 µs, dc
≤
2%
TYP
20
120
600
300
MAX
UNIT
ns
ns
ns
ns
Delay time
Rise time
Storage time
Fall time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
