BD744, BD744A, BD744B, BD744C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
1000
V
CE
= -4 V
t
p
= 300 µs, duty cycle < 2%
TCS638AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
-10
I
C
= 10
I
B
t
p
= 300µs, duty cycle < 2%
TCS638AB
T
C
= 125°C
T
C
= 25°C
T
C
= -55°C
h
FE
- DC Current Gain
-1·0
100
-0·1
T
C
= -55°C
T
C
= 25°C
T
C
= 125°C
-0·01
-0·1
-1·0
-10
-100
10
-0·1
-1·0
-10
-100
I
C
- Collector Current - A
I
C
- Collector Current - A
Figure 1.
Figure 2.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100
SAS638AA
I
C
- Collector Current - A
-10
t
p
= 1 ms,
d = 0.1 = 10%
t
p
= 10 ms,
d = 0.1 = 10%
t
p
= 50 ms,
d = 0.1 = 10%
DC Operation
-1·0
-0·1
BD744
BD744A
BD744B
BD744C
-0·01
-1·0
-10
-100
-1000
V
CE
- Collector-Emitter Voltage - V
Figure 3.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
3
BOURNS [ BOURNS ELECTRONIC SOLUTIONS ]
