TISP6NTP2CDR-S 参数 Datasheet PDF下载

TISP6NTP2C High Voltage Ringing SLIC Protector

Electrical Characteristics, 0

°C

≤

TJ

≤

70

°C

(Unless Otherwise Noted)

Parameter

I

D

V

(BO)

V

(BO)

V

GK(BO)

V

F

V

FRM

V

FRM

I

H

I

GKS

I

GT

V

GT

C

KA

Off-state current

Ramp breakover

voltage

Impulse breakover

voltage

Gate-cathode impulse

breakover voltage

Forward voltage

Ramp peak forward

recovery voltage

Impulse peak forward

recovery voltage

Holding current

Gate reverse current

V

D

= V

DRM

, V

GK

= 0

UL 497B, dv/dt

≤±100

V/µs, di/dt =

±10

A/µs,

V

GG

= -100 V, Maximum ramp value =

±10

A

(see Note 3)

2/10

µs,

I

TM

= -27 A, di/dt = -27 A/µs, R

S

= 50

Ω,

V

GG

= -100 V,

(see Note 3)

I

F

= 5 A, t

w

= 200

µs

UL 497B, dv/dt

≤±100

V/µs, di/dt =

±10

A/µs,

Maximum ramp value =

±10

A

2/10

µs,

I

TM

= -27 A, di/dt = -27 A/µs, R

S

= 50

Ω,

(see Note 3)

I

T

= -1 A, di/dt = 1A/ms, V

GG

= -100 V

V

GG

= V

GK

= V

GKRM

, V

KA

= 0

I

T

= -3 A, t

p(g)

≥

20

µs,

V

GG

= -100 V

I

T

= -3 A, t

p(g)

≥

20

µs,

V

GG

= -100 V

f = 1 MHz, V

d

= 1 V, I

G

= 0, (see Note 4)

V

D

= -3 V

V

D

= -48 V

T

J

= 25

°C

T

J

= 25

°C

-150

-5

-50

5

6

2.5

100

50

T

J

= 25

°C

Test Conditions

T

J

= 25

°C

Min

Typ

Max

-5

-50

T

J

= 25

°C

-112

-115

15

3

5

12

Unit

µA

µA

V

V

V

V

V

V

mA

µA

µA

mA

mA

V

pF

pF

2/10

µs,

I

TM

= -27 A, di/dt = -27 A/µs, R

S

= 50

Ω,

V

GG

= -100 V,

Gate trigger current

Gate-cathode trigger

voltage

Cathode-anode off-

state capacitance

NOTES: 3. GR-1089-CORE intra-building 2/10, 1.5 kV conditions with 20 MHz bandwidth. The diode forward recovery and the thyristor gate

impulse breakover (overshoot) are not strongly dependent of the SLIC supply voltage value (V

GG

).

4. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are a.c. connected to the guard terminal of the bridge.

Thermal Characteristics

Parameter

R

θJA

Junction to free air thermal resistance

Test Conditions

T

A

= 70

°C,

EIA/JESD51-3 PCB,

EIA/JESD51-2 environment, P

tot

= 0.52 W

Min

Typ

Max

160

Unit

°C/W

MARCH 2002 – REVISED FEBRUARY 2005

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.