BSI
BS62LV1027
DC ELECTRICAL CHARACTERISTICS ( TA = -40oC to + 85oC )
PARAMETER
MIN. TYP. (1) MAX.
UNITS
PARAMETER
TEST CONDITIONS
NAME
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Guaranteed Input Low
Voltage(2)
VIL
-0.5
--
0.8
V
2.0
2.2
Guaranteed Input High
VIH
IIL
--
--
--
Vcc+0.3
V
Voltage(2)
IN
Input Leakage Current
Output Leakage Current
Vcc = Max, V = 0V to Vcc
--
1
1
uA
uA
IH
IL,
Vcc = Max, CE1= V , CE2= V or
OE = V , V = 0V to Vcc
LO
I
--
IH
I/O
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
VOL
VOH
Output Low Voltage
Output High Voltage
Vcc = Max, IOL = 2.0mA
--
--
--
0.4
--
V
Vcc = Min, IOH = -1.0mA
2.4
V
--
--
--
--
--
--
--
--
15
39
IL
IH
Operating Power Supply CE1 = V , or CE2 = V ,
Current
(5)
70ns
ICC
mA
mA
uA
DQ
I
= 0mA, F = Fmax(3)
--
0.5
1.0
2.5
20
CE1 = VIH, or CE2 = VIL
DQ = 0mA
,
ICCSB
Standby Current-TTL
I
--
CE1≧Vcc-0.2V or CE2≦0.2V,
IN≧Vcc-0.2V or VIN≦0.2V
0.1
0.6
(4)
ICCSB1
Standby Current-CMOS
V
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
4. IccSB1_Max. is 1.3uA/8.0uA at Vcc=3.0V/5.0V and TA=70oC.
5. Icc_Max. is 18mA(@3V)/ 47mA(@5V) under 55ns operation.
DATA RETENTION CHARACTERISTICS ( TA = -40oC to + 85oC )
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.(1)
MAX.
UNITS
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
VDR
Vcc for Data Retention
1.5
--
--
V
CE1 ≧ Vcc - 0.2V or CE2 ≦ 0.2V,
VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V
(3)
ICCDR
Data Retention Current
--
0
0.05
0.3
uA
Chip Deselect to Data
Retention Time
tCDR
tR
--
--
--
--
ns
ns
See Retention Waveform
(2)
Operation Recovery Time
TRC
1. Vcc = 1.5V, TA = + 25OC
2. tRC = Read Cycle Time
3. IccDR_MAX. is 0.2uA at TA=70OC.
LOW VCC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )
Data Retention Mode
DR ≥ 1.5V
V
Vcc
Vcc
Vcc
CE1
t
R
t
CDR
≥
CE1 Vcc - 0.2V
VIH
VIH
LOW VCC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )
Data Retention Mode
DR ≧ 1.5V
V
Vcc
Vcc
Vcc
t
R
t
CDR
CE2 ≦ 0.2V
VIL
VIL
CE2
Revision 2.1
R0201-BS62LV1027
3
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
