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BS62LV1027TC-55 参数 Datasheet PDF下载

BS62LV1027TC-55图片预览
型号: BS62LV1027TC-55
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM [Very Low Power/Voltage CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 10 页 / 428 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1
(1,2,4)
BS62LV1027
t
RC
ADDRESS
t
D
OUT
t
OH
AA
t
OH
READ CYCLE2
CE1
(1,3,4)
t
CE2
(5)
CLZ
ACS1
t
t
ACS2
t
CHZ1,
t
(5)
CHZ2
D
OUT
(1,4)
READ CYCLE3
t
RC
ADDRESS
t
OE
AA
t
CE1
OE
t
OH
t
t
(5)
CLZ1
OLZ
t
ACS1
t
OHZ
(5)
(1,5)
t
CHZ1
CE2
t
t
(5)
CLZ2
ACS2
t
(2,5)
CHZ2
D
OUT
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
IL
and CE2= V
IH.
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
IL
.
5. The parameter is guaranteed but not 100% tested.
R0201-BS62LV1027
5
Revision 2.1
Jan.
2004