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BS62LV2008DC-70 参数 Datasheet PDF下载

BS62LV2008DC-70图片预览
型号: BS62LV2008DC-70
PDF下载: 下载PDF文件 查看货源
内容描述: 非常低的功率/电压CMOS SRAM 256K ×8位 [Very Low Power/Voltage CMOS SRAM 256K X 8 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 319 K
品牌: BSI [ BRILLIANCE SEMICONDUCTOR ]
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BSI
PIN DESCRIPTIONS
BS62LV2008
Function
These 18 address inputs select one of the 262,144 x 8-bit words in the RAM
CE1 is active LOW and CE2 is active HIGH. Both chip enables must be active when
data read from or write to the device. If either chip enable is not active, the device is
deselected and is in a standby power mode. The DQ pins will be in the high
impedance state when the device is deselected.
Name
A0-A17 Address Input
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
WE Write Enable Input
The write enable input is active LOW and controls read and write operations. With the
chip selected, when WE is HIGH and OE is LOW, output data will be present on the
DQ pins; when WE is LOW, the data present on the DQ pins will be written into the
selected memory location.
OE Output Enable Input
The output enable input is active LOW. If the output enable is active while the chip is
selected and the write enable is inactive, data will be present on the DQ pins and they
will be enabled. The DQ pins will be in the high impedance state when OE is inactive.
DQ0-DQ7 Data Input/Output
Ports
Vcc
Gnd
These 8 bi-directional ports are used to read data from or write data into the RAM.
Power Supply
Ground
TRUTH TABLE
MODE
WE
CE1
CE2
OE
I/O OPERATION
Vcc CURRENT
Not selected
(Power Down)
Output Disabled
Read
Write
X
X
H
H
L
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
High Z
High Z
D
OUT
D
IN
I
CCSB
, I
CCSB1
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
SYMBOL
V
TERM
T
BIAS
T
STG
P
T
I
OUT
PARAMETER
Terminal Voltage with
Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current
OPERATING RANGE
UNITS
V
O
RATING
-0.5 to
Vcc+0.5
-40 to +85
-60 to +150
1.0
20
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0 C to +70 C
-40 C to +85 C
O
O
O
O
Vcc
4.5V ~ 5.5V
4.5V ~ 5.5V
C
C
O
W
mA
CAPACITANCE
(1)
(TA = 25
o
C, f = 1.0 MHz)
SYMBOL
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
C
IN
C
DQ
PARAMETER
Input
Capacitance
Input/Output
Capacitance
CONDITIONS
MAX.
UNIT
V
IN
=0V
V
I/O
=0V
6
8
pF
pF
1. This parameter is guaranteed and not 100% tested.
R0201-BS62LV2008
2
Revision 1.1
Jan.
2004