BSI
DC ELECTRICAL CHARACTERISTICS
( TA = -40 to + 85
o
C )
PARAMETER
NAME
V
IL
V
IH
I
IL
I
LO
V
OL
V
OH
I
CC
(5)
BS62LV4006
TEST CONDITIONS
Vcc = 3.0 V
Vcc = 5.0 V
Vcc = 3.0 V
Vcc = 5.0 V
PARAMETER
Guaranteed Input Low
Voltage
(3)
Guaranteed Input High
Voltage
(3)
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
MIN. TYP.
-0.5
2.0
2.2
--
--
Vcc = 3.0 V
Vcc = 5.0 V
Vcc = 3.0 V
Vcc = 5.0 V
(1)
MAX.
0.8
0.8
Vcc+0.3
1
1
0.4
0.4
--
25
60
0.5
1.0
10
60
UNITS
--
--
--
--
--
--
--
V
V
uA
uA
V
V
mA
Vcc = Max, V
IN
= 0V to Vcc
Vcc = Max, CE = V
IH
, or OE = V
IH
,
V
I/O
= 0V to Vcc
Vcc = Max, I
OL
= 2.0mA
Vcc = Min, I
OH
= -1.0mA
CE = V
IL
, I
DQ
= 0mA,
F=Fmax
(2)
CE = V
IH
, I
DQ
= 0mA
CE
≧
Vcc-0.2V,
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
70ns
70ns
--
2.4
2.4
--
Vcc = 3.0 V
Vcc = 5.0 V
Vcc = 3.0 V
I
CCSB
(4)
Vcc = 5.0 V
Vcc = 3.0 V
Vcc = 5.0 V
--
--
0.45
2.0
mA
I
CCSB1
Standby Current-CMOS
--
uA
1. Typical characteristics are at T
A
= 25
o
C.
2. Fmax = 1/t
RC
.
3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
4. I
cc
SB1_MAX.
is 5uA/30uA at Vcc=3.0V/5.0V and T
A
=70
o
C.
5. Icc_
MAX.
is 30mA(@3.0V)/70mA(@5.0V) under 55ns operation.
DATA RETENTION CHARACTERISTICS
( TA = -40 to + 85
o
C )
SYMBOL
V
DR
PARAMETER
Vcc for Data Retention
TEST CONDITIONS
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
CE
≧
Vcc - 0.2V
V
IN
≧
Vcc - 0.2V or V
IN
≦
0.2V
MIN.
1.5
TYP.
(1)
--
MAX.
--
UNITS
V
I
CCDR
t
CDR
t
R
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
--
0
0.3
--
--
1.3
--
--
uA
ns
ns
See Retention Waveform
T
RC (2)
1. Vcc = 1.5V, T
A
= + 25
O
C
2. t
RC
= Read Cycle Time
3. I
cc
DR
_
MAX.
is 0.8uA at T
A
=70
O
C.
LOW V
CC
DATA RETENTION WAVEFORM
Vcc
V
IH
Vcc
( CE Controlled )
Data Retention Mode
V
DR
≥
1.5V
Vcc
t
CDR
CE
≥
Vcc - 0.2V
t
R
V
IH
CE
R0201-BS62LV4006
3
Revision 1.1
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
